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| FMM6G30US60 IGBT FMM6G30US60 Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Features * * * * * * * * Short Circuit rated Time ; 10us @ TC =100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A High Input Impedance 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Built-in NTC Thermistor UL Certified No. E209204 R S T Package Code : 24PM-AA P P+ GV GW GU EU EV U EW V W Application * * * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS -GU -GV -GW N N- E NTC T1 T2 Internal Circuit Diagram TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque Inverter Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 80C Pulsed Collector Current Diode Continuous Forward Current @ TC = 80C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4 FMM6G30US60 600 20 30 60 30 60 104 10 1600 30 300 369 -40 to +150 -40 to +125 2500 4.0 Units V V A A A A W us V A A A2s C C V N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature (c)2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Electrical Characteristics of IGBT @ Inverter Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2100 270 36 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 30A, RG = 15, VGE = 15V, Inductive Load, TC = 25C ------------10 ---110 90 150 130 0.9 0.58 100 90 150 200 0.98 0.9 -90 20 35 150 200 200 250 --150 200 200 400 ---150 40 70 ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC VCC = 300 V, IC = 30A, RG = 15, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15V 100C @ TC = VCE = 300 V, IC = 30A, VGE = 15V (c)2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Electrical Characteristics of DIODE @ Inverter Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 30A di / dt = 60 A/us TC = 25C unless otherwise noted Test Conditions TC = 25C IF = 30A TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 2.0 2.0 90 130 2.2 3.4 400 880 Max. 2.8 -180 -3.4 -600 -- Units V ns A nC Electrical Characteristics of DIODE @ Converter T Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current C = 25C unless otherwise noted Test Conditions TC = 25C IF = 30A TC = 100C VR = VRRM TC = 25C TC = 100C Min. ----- Typ. 1.1 1.0 -5 Max. 1.5 -8 -- Units V mA Thermal Characteristics Inverter Converter Weight Symbol RJC RJC RJC Parameter Junction-to-Case (IGBT Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Junction-to-Case (DIODE Part, per 1/6 Module) Weight of Module Typ. ---210 Max. 1.2 1.5 1.3 -Units C/W C/W C/W g NTC Thermistor Characteristics Thermistor Symbol R25 R100 B(25/100) Parameter Rated Resistance @ Tc = 25C Rated Resistance @ Tc = 100 C B - Value Tol. +/- 5 % +/- 5 % +/- 3 % Typ. 5.0 0.415 3692 Units K K (c)2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 120 100 Common Emitter VGE = 15 V TC = 25 TC = 125 ------ 100 Common Emitter 14V 12V 15V 16V 18V 20V VGE = 10V TC = 25 C o 80 C [A] C o ll e c t o r C u r r e n t , I C o ll e c t o r C u r r e n t , I 80 60 40 20 0 C [A] 60 40 20 0 1 10 C E (s a t) 0 1 2 3 4 5 C E (s a t) 6 C o ll e c t o r - E m it t e r V o lt a g e , V [V] C o ll e c t o r - E m it t e r V o lt a g e , V [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 100 [V] Common Emitter 14V 15V 16V 12V C o ll e c t o r - E m it t e r V o lt a g e , V C C E (s a t) [A] 80 TC = 125 C o 3.5 3.0 2.5 2.0 1.5 1.0 -50 Common Emitter VGE = 15 V C o ll e c t o r C u r r e n t , I 60 18V 20V VGE = 10V 60 A 40 30 A 20 15 A 0 0 1 2 3 4 C E (s a t) 5 6 C o ll e c t o r - E m it t e r V o lt a g e , V [V] 0 50 C 100 150 C ase T e m p erature, T [oC ] Fig 3. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level 5000 5 Cie s Thermal Response, Zthjc [/W] 4000 T 1 V C o m m o n E m itt e r = 0 V, f = 1 M H z GE C = 25 o C C a p a c it a n c e [ p F ] 3000 Coes 0.1 2000 Cres 1000 0.01 0.005 10 -5 IGBT : DIODE : 0 0 10 -4 10 -3 10 -2 10 -1 10 10 1 0.1 1 10 CE C o ll e c t o r - E m it t e r V o lt a g e , V [V] Rectangular Pulse Duration [sec] Fig 5. Transient Thermal Impedance (c)2003 Fairchild Semiconductor Corporation Fig 6. Capacitance Characteristics FMM6G30US60 Rev. A FMM6G30US60 1000 S w it c h i n g T i m e [ n s ] S w it c h i n g T i m e [ n s ] Common Emitter VCC = 300V, VGE = 15V IC = 30A TC = 25 TC = 125 ------ 1000 Common Emitter VCC = 300V, VGE = 15V IC = 30A TC = 25 TC = 125 ------ T o ff Ton Tr 100 Tf 100 20 40 60 80 100 20 40 60 80 100 G ate R e sista n c e, R g [ ] G ate R e sista n c e, R g [ ] Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance 10000 S w it c h i n g L o s s [ u J ] Eon 1000 E o ff S w it c h i n g T i m e [ n s ] Common Emitter VCC = 300V, VGE = 15V IC = 30A TC = 25 TC = 125 ------ 1000 Common Emitter VGE = 15V, RG = 15 TC = 25 TC = 125 ------ Ton Tr 100 100 20 40 60 80 100 20 30 40 C 50 60 G ate R e sista n c e, R g [ ] C o ll e c t o r C u r r e n t , I [A] Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current 1000 S w it c h i n g T i m e [ n s ] T o ff S w it c h i n g L o s s [ u J ] Common Emitter VGE = 15V, RG = 15 T C = 25 T C = 125 ------ 10000 Common Emitter VGE = 15V, RG = 15 TC = 25 TC = 125 ------ Eon 1000 E o ff Tf 100 100 20 30 40 C 50 60 20 30 40 C 50 60 C o ll e c t o r C u r r e n t , I [A] C o ll e c t o r C u r r e n t , I [A] Fig 11. Turn-Off Characteristics vs. Collector Current (c)2003 Fairchild Semiconductor Corporation Fig 12. Switching Loss vs. Collector Current FMM6G30US60 Rev. A FMM6G30US60 15 R C o m m o n E m itt e r = 10 L 100 [V] 12 T = 25 C o V CC = 100 V 200 V 300 V C G a t e - E m itt e r V o lt a g e , V Collector Current, I C [A] GE 9 10 6 3 1 Single Nonrepetitive Pulse TJ 125 VGE = 15V RG = 15 0 100 200 300 400 500 600 700 0 0 20 40 60 g 80 100 0.1 G ate C harg e, Q [nC] Collector-Emitter Voltage, VCE [V] Fig 13. Gate Charge Characteristics Fig 14. RBSOA Characteristics 90 80 70 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0V T C = 25 T C = 125 20 10 T rr [A] Forward Current, I F 60 50 40 30 20 10 0 0 1 2 3 4 Irr 1 Common Cathode di/dt = 60A/us TC = 25 TC = 100 5 10 15 20 25 30 0.5 Forward Voltage, V F [V] Forward Current, IF [A] Fig 15. Forward Characteristics Fig 16. Reverse Recovery Characteristics 1000 100 100 IF, Instantaneous Forward Current [A] TC =125 25 I R, Reverse Current [uA] 10 1 0.1 0.01 T C = 125 10 25 1 1E-3 0 400 800 1200 1600 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VF, Forward Voltage [V] VR, Reverse Voltage [V] Fig 17. Rectifier( Converter ) Characteristics (c)2003 Fairchild Semiconductor Corporation Fig 18. Rectifier( Converter ) Characteristics FMM6G30US60 Rev. A FMM6G30US60 3800 3750 10 3700 ] B 2 5/X C o n sta nt 1 -25 0 25 50 75 100 125 R e sista n c e, R [ K 3650 3600 3550 3500 3450 3400 -25 0 25 50 75 100 T e m p erature, T [oC ] T e m p erature [oC ] Fig 19. NTC Characteristics Fig 20. NTC Characteristics (c)2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A FMM6G30US60 Package Dimension 24PM-AA -. Pin Coordinate Pin #No 1 Coordinate x 0.0 -11.43 -22.86 -34.29 -45.72 -57.15 -66.27 -66.27 -66.27 -66.27 -41.91 -38.10 -30.48 -26.67 -19.05 -15.24 -7.62 -3.81 0.0 3.81 7.62 12.93 12.93 12.93 y 0.0 0.0 0.0 0.0 0.0 0.0 5.71 13.33 28.57 36.19 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 41.90 32.38 28.57 13.33 107.0 0.80 4- O6.0 4- O2.0 0.10 Dp 2 3 4.5 10 93.0 0.30 2- O5.5 0.30 Mounting-Hole 21 4 5 6 7 8 45.0 0.80 41.9 0.30 35.0 0.30 Name Plate 6 1 20.950.20 9 10 11 12 13 26.670.20 1.15 0.20 * 0.8t 14 15 16 32.01.00 17 18 19 15.30.50 16.80.50 7.1 42.70.50 20 21 22 23 24 * datum pin : #1 * Pin Tilt : 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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